Abstract
This article examines the synthesis of metal oxide thin films using sol-gel, deposition, and spray pyrolysis methods. Analysis of sol-gel precursor viscosity shows that 12 hours of aging is optimal for high transparency, while 8 hours is best for achieving low electrical resistance. The study also establishes parameters for spray pyrolysis at 420C and utilizes Antimony doping to produce high-quality films as alternatives to ITO. These results are recommended for the fabrication of structural elements in field-effect transistors.
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